CS5N10AE-G-1 Datasheet, CR Micro

* Fast Switching
* Low ON Resistance(Rdson≤67 mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Tes.

The package form is SOP-8, which accords with the RoHS standard. Features：
* Fast Switching
* Low ON Resista.

CS5N10 AE-G-1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suit.

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